PlasmaProTMSystem400 Magnetron Sputtering Process Tool for PVD

Magnetron Sputtering Process Tool
for Physical Vapour Deposition

The PlasmaPro System400 offers the flexibility of dc, pulsed dc, rf and reactive magnetron sputtering for batch or single-wafer PVD processing in production or research & development

Flexible volume throughput

Capable of taking 8 wafers of 50, 75 or 100 mm (2, 3 or 4 inch), or 4 wafers of 150 or 200 mm (6 or 8 inch)

Range of wafer handling options:

Single-wafer loadlock
Cassette loading
Clustered cassette-to-cassette via robotic wafer transfer
Clustering tools avoids oxidation and particle contamination as there is no exposure of the wafer to air between steps. It also improves yield and throughput as it reduces handling damage and transfer times. The PlasmaPro System400 magnetron sputter tool may be clustered with other Oxford Instruments process tools, for example:
Etch processes - RIE or ICP (PlasmaPro System100, PlasmaPro System133)
Deposition - PECVD, ICP-CVD (PlasmaPro System100, PlasmaPro System133) or atomic layer deposition (ALD) (FlexAL®)

Proven Hardware

The PlasmaPro System400 is based on the same hardware platform as Oxford Instruments’ PlasmaPro System100 and PlasmaPro System133 plasma etch and deposition tools, recognised for their reliability in hundreds of installed systems worldwide

Images
Process uniformity
Materials
Support

Plasmalab System400 open - Click for larger image

Optimum process uniformity and stability

Wafer table may be operated in either static or rotating mode
Uniformity masks can be fitted to further enhance uniformity, or removed for high-rate processes
rf bias offers plasma pre-cleaning
Loadlocked wafer entry minimises particle contamination
Optional cryo pump for moisture-sensitive applications
Typical uniformity:

100 mm	± 3%
125 mm	± 4%
150 mm	± 5%

Full range of materials

Ability to sputter metals and oxides with film thicknesses from 20 nm up to several µm
Suitable for full range of sputtered metals – from Al to Zr
Flexibility in processes and materials is enabled by the wide temperature range of the wafer table, with both water-cooling and heating up to 300 °C
rf bias allows plasma-assisted deposition for lower temperatures, greater adhesion and more flexibility in substrate material
Deposit multiple materials in one chamber in a single process
The System400 may be configured either with 4 x 200 mm or 6 x 100 mm rf and/or dc magnetrons. The single process chamber is divided into 4 or 6 sub-chambers, isolating the sources from each other without the high cost of clustering several single process chambers
Multi-layer processes are automated by process recipes in the PC2000TM process tool software, with its intuitive graphical interface and flexible user options

- A Global Reach

Oxford Instruments is committed to supporting our customers’ success. We recognise that this requires world class products complemented by world class support. Our global service force is backed by regional offices, offering rapid support wherever you are in the world.

Service Centres*

Parts Centres

Europe & Middle East

Montevrain, France
Wiesbaden, Germany
Haifa, Israel
St Petersburg, Russia
Moscow, Russia
Bristol, UK

USA

Arizona, USA
Texas, USA
San Francisco, CA, USA
Concord, MA, USA

Asia

Beijing, China
Guangzhou, China
Shanghai, China
Hong Kong
New Delhi, India
Mumbai, India
Calcutta, India
Bangalore, India
Tokyo, Japan
Kyungki-do, Korea
Penang, Malaysia
Singapore
Taiwan County, Taiwan

Asia

Shanghai, China
Taiwan County, Taiwan

EMEA

Bristol, UK

USA

Concord, MA, USA

*Includes agents with OIPT trained engineers

For information on our Flexible Support Agreements please visit our Support pages