Ionfab®300Plus Ion Beam Etch & Deposition Tool

Ionfab®300Plus Ion beam etch &
deposition tool

Oxford Instruments offers a single tool, allowing the flexibility to perform etch and/or deposition and maximising system utilisation. System specifications can be closely tuned to applications, enabling faster and repeatable process results. Oxford Instruments’ systems are scalable from R&D to batch production in one tool.

The Oxford Instruments Ion Beam range offers functionality in multiple modes:

Ion Beam Etching (IBE)
Reactive Ion Beam Etching (RIBE)
Chemical Assisted Ion Beam Etching (CAIBE)
Ion Beam Sputter Deposition (IBSD)
Ion Assisted Sputter Deposition (IASD)

Typical applications and materials:

IR detectors
CdHgTe (CMT) etch
VOx deposition and etch
Metal contact and track etch
Cu, Ni, Al…
Noble metals: Au, Pt, Pd…
Diffraction gratings

SiO2 ‘blazed’ etch

Spintronics and MRAM

AR and HR coatings for laser bars

Telecom filters

III-V photonics etching

Thin film magnetic hard disk heads (TFMH)

Images
Substrate handling
Ion source
Process control
Support

Flexibility in a single tool

Handles from small pieces, through 100 mm (4 inch), up to 200 mm (8 inch) wafers
Ability to clamp any shape, and design unique carrier plates
Wafer handling options
Manual loading for one-off trials
Load-lock for faster trials
Cassette-to-cassette loading/unloading for batch production
Clusterable with other process tools including Oxford Instruments’ Plasmalab® plasma etch, deposition and sputtering tools, and FlexAL® atomic layer deposition (ALD) tools
Simple upgrade options to add etch and deposition sources

Leading ion source and grid set technology
Grids are designed to suit specific applications: high uniformity, high rate, & low energy
Specific deposition grid sets to suit multiple targets, offer superior utilisation of target material
A full range of etch source options up to 35cm
Dual beam configurations (etch plus deposition source) offer the possibility to add capping layer immediately after etch, without exposing the process chamber or wafer to atmosphere
Increased deposition rates by using etch source as a plasma radical source (IASD)

Flexibility in a single tool
Tiltable substrate holder can be angled from -90° up to +75° (depending upon configuration)
- Enables ‘blazed’ gratings
- Allows sidewalls to be cleaned off or etched
Angle control of substrate relative to deposition target ensures excellent deposition uniformity
Platen rotation speed
Variable platen rotation speed enables deposition rate to be controlled specifically for the application
Standard and high speed platen options
Substrate cooling
Prevents degradation of substrate and devices structures/other materials already in place
Option for wafer backside cooling with He (turbo-pump) or Ar (cryo-pump)
Process monitoring
Etch endpoint monitoring by SIMS for multi-material applications
Deposition process monitoring
- Crystal monitor (single or dual head)
- White Light Optical Monitor (WLOM)
Chamber gas identification, partial pressure control and leak checking via RGA

- A Global Reach

Oxford Instruments is committed to supporting our customers’ success. We recognise that this requires world class products complemented by world class support. Our global service force is backed by regional offices, offering rapid support wherever you are in the world.

Service Centres*

Parts Centres

Europe & Middle East

Montevrain, France
Wiesbaden, Germany
Haifa, Israel
St Petersburg, Russia
Moscow, Russia
Bristol, UK

USA

Arizona, USA
Texas, USA
San Francisco, CA, USA
Concord, MA, USA

Asia

Beijing, China
Guangzhou, China
Shanghai, China
Hong Kong
New Delhi, India
Mumbai, India
Calcutta, India
Bangalore, India
Tokyo, Japan
Kyungki-do, Korea
Penang, Malaysia
Singapore
Taiwan County, Taiwan

Asia

Shanghai, China
Taiwan County, Taiwan

EMEA

Bristol, UK

USA

Concord, MA, USA

*Includes agents with OIPT trained engineers

For information on our Flexible Support Agreements please visit our Support pages

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