Ionfab®300Plus Ion beam etch &
deposition System
Oxford Instruments offers a single tool, allowing the flexibility to perform etch and/or deposition and maximising system utilisation. System specifications can be closely tuned to applications, enabling faster and repeatable process results. Oxford Instruments’ systems are scalable from R&D to batch production in one tool.
The Oxford Instruments Ion Beam range offers functionality in multiple modes:
- Ion Beam Etching (IBE)
- Reactive Ion Beam Etching (RIBE)
- Reactive Ion Beam Deposition (RIBD)
- Chemically Assisted Ion Beam Etching (CAIBE)
- Ion Beam Sputter Deposition (IBSD)
- Ion Assisted Sputter Deposition (IASD)
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Images
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Substrate handling
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Ion source
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Process control
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Applications
Flexibility in a single tool
- Handles from small pieces, through 100 mm (4 inch), up to 200 mm (8 inch) wafers
- Ability to clamp any shape, and design unique carrier plates
- Wafer handling options
- Manual loading for one-off trials
- Load-lock for faster trials
- Cassette-to-cassette loading/unloading for batch production
- Clusterable with other process tools including Oxford Instruments’ PlasmaProTM plasma etch, deposition and sputtering tools, and FlexAL® atomic layer deposition (ALD) tools
- Simple upgrade options to add etch and deposition sources
Ion Source
- Leading ion source and grid set technology
- Grids are designed to suit specific applications: high uniformity, high rate, & low energy
- Specific deposition grid sets to suit multiple targets, offer superior utilisation of target material
- A full range of etch source options up to 35cm
- Dual beam configurations (etch plus deposition source) offer the possibility to add capping layer immediately after etch, without exposing the process chamber or wafer to atmosphere
- Increased deposition rates by using etch source as a plasma radical source (IASD)
Flexibility in a single tool
- Tiltable substrate holder can be angled from -90° up to +75° (depending upon configuration)
- Enables ‘blazed’ gratings
- Allows sidewalls to be cleaned off or etched
- Angle control of substrate relative to deposition target ensures excellent deposition uniformity
Platen rotation speed
- Variable platen rotation speed enables deposition rate to be controlled specifically for the application
Standard and high speed platen options
Substrate cooling
- Prevents degradation of substrate and devices structures/other materials already in place
Option for wafer backside cooling with He (turbo-pump) or Ar (cryo-pump)
Process monitoring
- Etch endpoint monitoring by SIMS for multi-material applications
- Deposition process monitoring
- Crystal monitor (single or dual head)
- White Light Optical Monitor (WLOM)
- Chamber gas identification, partial pressure control and leak checking via RGA
Typical applications and materials:
- IR detectors
- CdHgTe (CMT) etch
- VOx deposition and etch
- Metal contact and track etch
- Cu, Ni, Al…
- Noble metals: Au, Pt, Pd…
- Diffraction gratings
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- SiO2 ‘blazed’ etch
- Spintronics and MRAM
- AR and HR coatings for laser bars
- Telecom filters
- III-V photonics etching
- Thin film magnetic hard disk heads (TFMH)
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