CrystalFlex®- Multi-wafer HVPE reactor

CrystalFlex - Multi-wafer Hydride Vapour Phase Epitaxy reactor

CrystalFlex - A multi-wafer Hydride Vapour Phase Epitaxy Reactor providing advanced epitaxial growth control

Oxford Instruments’ leading edge CrystalFlex HVPE tool provides a cost effective route for the production of high quality epitaxial GaN, AlGaN and AlN single crystal materials.

The equipment is designed for R&D or full scale production of Group III nitrides with the focus on process stability,
reproducibility, and optimal source materials usage.
The flexible reactor configuration enables end users to grow a variety of products ranging from GaN to AlN and AlGaN with thickness from a few microns to a few millimeters.

Process Improvement:

Proprietary gas injector design for uniform gas flow
High capacity source boat design for increased uptime
Extended thermal flat zone for excellent thickness uniformity
Process support by a highly experienced team of scientists with in-depth process knowledge of HVPE

The HVPE Process

The HVPE process for the growth of Group III nitrides is based on two-step thermodynamic-driven, chemical
reaction between metallic sources of (Ga, Al, and In), HCl and ammonia at temperatures of 1000 - 1100°C and
atmospheric pressure. It provides a simple and cost effective way to grow Group III nitrides.

Images
System Benefits
System Automation
Specifications
Support

CrystalFlex operation - Click for larger image

CrystalFlex user inferface - Click for larger image

Key Features and Benefits:

Wide range of growth rates from 1 to 200 microns/hour
GaN thickness from a few microns up to a few millimeters
N- and p-type dopants available
Flexible wafer size configuration from 50mm to 150mm
High quality, crack free epitaxial films with excellent thickness uniformity
Customized source configurations to allow material growth of Group III nitrides for different applications

Operating Benefits:

Atmospheric operation – no vacuum facilities required
Low operating cost – no expensive metalorganics required
Reduced downtime – easily replaceable growth liners to combat parasitic deposition
Clean and controlled environment – N2-purge glovebox enclosure to reduce particle contamination of wafers and source material
Efficient service support – dedicated global service support team with fast response

PC4000 software user interface

Process Software Control:

Front end display of key process parameters
Process recipes are written, stored and recalled through the same software, building a library
Password controlled user login allows different levels of user access
Continuous system data logging ensures traceability of each waferand process run

Multi-mode operations for flexible epitaxial growth requirements:

Single shot ‘stage-to-stage’ wafer transfer using on-screen front end software control
Full system automation using pre-programmed software recipe for entire epitaxial growth run

Growth Rate	Up to 200 microns/hour
Growth Pressure	Atmospheric operation
Maximum Furnace Temp	1200°
Carrier Gas	Inert gas of N2 or Ar
Reactant Gas	HCl and NH3

Wafer Size	Max Load
50mm	12
75mm	4
100mm	3
150mm	1

- A Global Reach

Oxford Instruments is committed to supporting our customers’ success. We recognise that this requires world class products complemented by world class support. Our global service force is backed by regional offices, offering rapid support wherever you are in the world.

Service Centres*

Parts Centres

Europe & Middle East

Montevrain, France
Wiesbaden, Germany
Haifa, Israel
St Petersburg, Russia
Moscow, Russia
Bristol, UK

USA

Arizona, USA
Texas, USA
San Francisco, CA, USA
Concord, MA, USA

Asia

Beijing, China
Guangzhou, China
Shanghai, China
Hong Kong
New Delhi, India
Mumbai, India
Calcutta, India
Bangalore, India
Tokyo, Japan
Kyungki-do, Korea
Penang, Malaysia
Singapore
Taiwan County, Taiwan

Asia

Shanghai, China
Taiwan County, Taiwan

EMEA

Bristol, UK

USA

Concord, MA, USA

*Includes agents with OIPT trained engineers

For information on our Flexible Support Agreements please visit our Support pages

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