InxGa1-xN Epitaxial Growth - Indium Gallium Nitride Epitaxy

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Typical parameters of  InxGa1-xN layers

 InN Content (x)

FWHM of ω scan X-ray (00.2)

rocking curve arc sec

 Thickness, microns
 0.05-0.2 <900 0.02-0.5

 

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