GaN Etching - Gallium Nitride Etch

Related Product:  System100

ICP Etching

  • Reactive Ion Etching with ICP Source (2 or 13.56 MHz)
  • Inductive Coupled Plasma
  • 13.56 MHz Plasma Excitation
  • Process chemistry: Cl based
  • RF driven substrate electrode
  • Rate: 0.5 - 1 µm/ min with SiO2 mask
  • 0.3 µm/ min with photoresist mask
  • Selectivity to SiO2 5 - 10 : 1 to PR 1.15 : 1
  • Anisotropic profile
  • Clean etch surface
  • Low ion induced damage

 ICP GaN Etch

                   8µm Deep Etch

GaN Etching: RIE with smooth Walls

  • Anisotropic etch with 90° walls
  • Rate: 70 nm/ min (2“ wafer)
  • Mask: photoresist
  • Selectivity for smooth 90° walls 2 : 1
  • Uniformity over 2" dia area: < +/- 3 %
  • Very smooth walls

 GaN Etching RIE

Courtesy of:   Infineon Munich, ZT KM 4

 

 

 

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