ZnO ALD (thermal only) - Zinc Oxide Atomic Layer Deposition

OpAL for Atomic Layer Deposition

Related Products:  

FlexAL         OpAL 

ZnO ALD

• Precursor: DEZ di ethyl zinc
• Non metal precursor: H2O
• Temperature controlled vapour draw
• Dose control by fast pulse ALD valve
• Deposition temperature: 50° - 200° C
• Cycle time 4 sec
  - Thickness per cycle 1.9 A (saturated dose)
• Resistivity 5 x E-4 ohm cm
• C impurity < 2 at % at 150° C
• Uniformity: ± 1% (100 mm)
• Repeatability: ± 1%
• Refractive index: 1.90 - 1.95
• Zn:O 1:1