Ion Beam Deposition of VO(5-x) - Vanadium Pentoxide Deposition

Ion Beam Deposition - Click for larger image

Ion Beam Deposition
from a V metal target
with O2 assist

Related Product:  Ionfab 300Plus

 

Deposition rate: 6-50 nm/ min
The deposition rate used will depend on electrical properties requirements of the deposited films. For the highest quality a lower rate is usually used.

  • Deposition Uniformity: <± 2 % over 8”
  • Electrical Resistance: 0.03-2000 Ohm-cm
  • Resistance uniformity: ± 3 %
  • Zero porosity SiO2 capping layer:
  • Deposition rate: > 20nm/min
  • Deposition uniformity: <± 2% over 8”
  • Refractive index: 1.4868 (632.8nm), 1.4738 (1550nm)
  • Film Stress: < 300 MPa Compressive
Contact Us

Related Products

Related Information

Deposition Processes - Deposition Process
SiO2 Deposition - Silicon Dioxide Deposition
SiN Deposition - Silicon Nitride Deposition
Hfn Deposition - Hafnium Deposition
High Quality Optical Coatings
Indium Tin Oxide Magnetron Sputtering Deposition
Al2O3 - Aluminium Oxide Deposition
TiO2 Deposition - Titanium Dioxide Deposition
ZnO ALD - Zinc Oxide Atomic Layer Deposition
Hafnium dioxide Reactive Ion Beam Deposition (HfO2 RIBD)
La2O3 Deposition - Lanthanum(III) Oxide Deposition
Ru Deposition - Ruthenium Deposition
a-Si Deposition - Amorphous Silicon Deposition (PECVD)
DLC Deposition - Diamond like Carbon Deposition
SiC Deposition - Silicon Carbide Plasma Enhanced Chemical Vapour Deposition
SiGe Deposition - Silicon Germanium Deposition
PolySi Deposition - Polysilicon Deposition

Downloads And Links