Ion Beam Deposition
from a V metal target
with O2 assist
Related Product: Ionfab 300Plus
Deposition rate: 6-50 nm/ min
The deposition rate used will depend on electrical properties requirements of the deposited films. For the highest quality a lower rate is usually used.
- Deposition Uniformity: <± 2 % over 8”
- Electrical Resistance: 0.03-2000 Ohm-cm
- Resistance uniformity: ± 3 %
- Zero porosity SiO2 capping layer:
- Deposition rate: > 20nm/min
- Deposition uniformity: <± 2% over 8”
- Refractive index: 1.4868 (632.8nm), 1.4738 (1550nm)
- Film Stress: < 300 MPa Compressive