SiO2 Deposition - Silicon Dioxide Deposition

SiO2 Silicon Dioxide Deposition
170 nm TEOS SiO2 over a 1 µm step

Silicon Dioxide (SiO2) deposition using various systems from Oxford Instruments Plasma Technology.

Please contact us if you would like more detailed process information

PECVD
TEOS
ICP CVD
ALD
Notes

SiO2 Deposition using the PlasmaProTMSystem100 PECVD for:

High Rate
Undoped (optical waveguides)
Ge-doped (optical waveguides)
High Quality
Production

Process Specification:

Deposition Temperature	Typically 300-400°C
Deposition Rate:
High rate	> 230 nm/min
Undoped	> 230 nm/min
Ge-doped	> 230 nm/min
High Quality	> 40 nm/min
Production	> 40 nm/min
Uniformity:
High rate	100mm < ± 3% (5mm excl zone) < ± 2% (7mm excl zone)	150mm < ± 4% (5mm excl zone) < ± 3% (7mm excl zone)
Undoped	100mm < ± 3% (5mm excl zone) < ± 2% (7mm excl zone)	150mm < ± 4% (5mm excl zone) < ± 3% (7mm excl zone)
Ge-doped	100mm < ± 3% (5mm excl zone) < ± 2% (7mm excl zone)	150mm < ± 4% (5mm excl zone) < ± 3% (7mm excl zone)
High Quality	100mm < ± 2%	7x2" Batch < ± 2% (7mm excl zone)	200mm < ± 4%
Production	100mm < ± 3% (5mm excl zone) < ± 2% (7mm excl zone)	150mm < ± 4% (5mm excl zone) < ± 3% (7mm excl zone)
Repeatability	< ± 2%
Refractive Index (measured at 632.8nm)
High rate	1.458 -1.500
Undoped	1.458 -1.500
Ge-doped	1.458 -1.500 Difference 0.2%-1.3%
High Quality	1.46 (control 1.46-1.50)
Production	1.458 -1.500
Uniformity	< ± 0.005 (200mm)

SiO2 Deposition in the PlasmaProTMSystem133 PECVD

Process Specification:

Deposition rate	> 40 nm/min
Batch Sizes	up to: 20x2" 9x3" 4x4"
Rate Uniformity11
Within-wafer2 100 mm 150 mm 200 mm 300 mm	< ± 1.5% (7mm excl zone) < ± 2% (7mm excl zone) < ± 3% (10mm excl zone) < ± 5% (10mm excl zone)
Wafer-to-wafer3	< ±3%
Run-to-run4	< ±2%
Refractive Index (measured at 632.8nm)	1.46 (Controllable)
Uniformity5	< ±0.005
Repeatability6	< ±0.005
Breakdown Voltage	> 5MV/cm
Stress (lower at Nf = 1.50)	<-300MPa compressive <-50MPa compressive @ RI =1.50-1.52
1. Rate uniformity defined as ±[(max-min)/ (2mean)]100% 2. Within-wafer uniformity applies to single wafer up to 12” 3. Wafer-to-wafer uniformity refers to the average, within single batch, of individual wafer uniformity averages 4. Run-to-run uniformity refers to batch averages for 5 consecutive runs 5. For refractive index uniformity is calculated as (see additional notes) 6. Run-to-run uniformity refers to batch averages for 5 consecutive runs

SiO2 Deposition in the PlasmaProTMNGP80®PECVD

Process Specification:

Deposition Rate	> 40 nm/min
Uniformity	< ± 2% (100mm) < ± 3% (7 x 2” batch) < ± 4% (200mm)
Repeatability	< ± 2%
Refractive Index (measured at 632.8nm)	1.46 (Control 1.46 - 1.50)
Uniformity	< ± 0.005 (200mm)

Process features

Deposition rate and refractive index control independent of wafer loading.
Uniform optical film properties.
Suitable for 300°C PECVD onto InP layers.
Provides a durable mask material for subsequent dry etch processes.

SiO2 Deposition in the PlasmaProTM800Plus PECVD

Process Specification:

Deposition rate	> 40 nm/min
Batch Sizes	up to: 43 x 2" 19 x 3" 10 x 100mm 7 x 125mm 4 x 150mm 2 x 200mm
Rate Uniformity1
Within-wafer2	< ±3%
Wafer-to-wafer3	< ±3%
Run-to-run4	< ±2%
Refractive Index (measured at 632.8nm)	1.46 (Control 1.46 - 1.50)
Uniformity5	< ±0.005 (400mm diameter)
Repeatability6	< ±0.005
Breakdown Voltage	> 5MV/cm
1. Rate uniformity defined as ±[(max-min)/ (2mean)]100% 2. Within-wafer uniformity applies to single wafer up to 12” 3. Wafer-to-wafer uniformity refers to the average, within single batch, of individual wafer uniformity averages 4. Run-to-run uniformity refers to batch averages for 5 consecutive runs 5. For refractive index uniformity is calculated as (see additional notes) 6. Run-to-run uniformity refers to batch averages for 5 consecutive runs

Process features:

Deposition rate and refractive index control independent of wafer loading
Uniform optical film properties
Suitable for 300°C PECVD onto InP layers
Provides a durable mask material for subsequent dry etch processes

TEOS based SiO2 PECVD in the PlasmaProTMSystem100

Process Specification:

Deposition Rate	> 30 nm/min
Uniformity:	100 mm < ± 3% (5mm excl zone) < ± 2% (7mm excl zone) 150 mm < ± 4% (5mm excl zone) < ± 3% (7mm excl zone)
Refractive Index (measured at 632.8nm)	1.44 – 1.46
Uniformity	< ± 0.001
Repeatability	< ± 0.001

Process features

TEOS PECVD showing 84% conformal step coverage (415nm horizontal, 350nm sidewall) SiO2 on Silicon step structure.

Conformal step-coverage.
Good step coverage shape with no voids or ‘nano slits’.
Control of film stress by selectable or mixed high/low frequency HF/LF power
Low N-H content provides low loss films at 1550nm.
Low stress process provides capability for layer deposition >50mm per wafer.

TEOS based SiO2 PECVD in the PlasmaProTMSystem133

Process Specification:

Deposition rate	> 30 nm/min
Batch Sizes	up to: 43 x 2" 19 x 3" 10 x 100mm 7 x 125mm 4 x 150mm 2 x 200mm
Rate Uniformity1
Within-wafer2 150 mm 200 mm 5 x 4” batch	< ±3% (5mm excl zone) < ±4% (10mm excl zone) < ±4% (10mm excl zone)
Wafer-to-wafer3	< ±2%
Run-to-run4	< ±2%
Refractive Index (measured at 632.8nm)	1.44-1.46 (Controllable)
Uniformity5	< ±0.001
Repeatability6	< ±0.001
1. Rate uniformity defined as ±[(max-min)/ (2mean)]100% 2. Within-wafer uniformity applies to single wafer up to 12” 3. Wafer-to-wafer uniformity refers to the average, within single batch, of individual wafer uniformity averages 4. Run-to-run uniformity refers to batch averages for 5 consecutive runs 5. For refractive index uniformity is calculated as (see additional notes) 6. Run-to-run uniformity refers to batch averages for 5 consecutive runs

Low Temperature ICP-CVD SiO2 Deposition using PlasmaProTMSystem 100-ICP380

Process Specification:

Deposition Rate	> 8 nm/min
Uniformity:
4" Wafer 6" Wafer	< ± 3% (± 1.5% with optimised hardware) < ± 4% (± 2% with optimised hardware)
Refractive Index (measured at 632.8nm)	~ 1.46

Low Temperature ICP-CVD SiO2 Deposition using PlasmaProTMSystem 100-ICP180

Process Specification:

		High Rate
Deposition Rate	> 8 nm/min	> 70 nm/min (rates up to 120nm/min have been achieved)
Uniformity:
2" Wafer	< ± 1.5% (7mm excl zone) < ± 2.5% (7mm excl zone)	< ± 1.5% (7mm excl zone) < ± 2.5% (7mm excl zone)
4" Wafer	< ± 2.5% (7mm excl zone) < ± 3.5% (5mm excl zone)	< ± 2.5% (7mm excl zone) < ± 3.5% (5mm excl zone)
6" Wafer	< ± 5% (7mm excl zone)	< ± 5% (7mm excl zone)
Refractive Index (measured at 632.8nm)	~ 1.46 (controllable)	~ 1.46 (controllable)

Process Features:

Deposition rate and refractive index control independent of wafer loading
Uniform optical film properties
Very dense films at low temperatures
Low damage deposition onto temperature sensitive substrates

SiO2 plasma ALD using the FlexAL®

Process Specification:

Cycle time

~ 9 seconds

Thickness uniformity1

100 mm

150 mm

200 mm

< ±1.0%2
< ±2.0%3
< ±3.0%4

Refractive Index

1.42—1.44

Additional Notes:

1. The data given above applies to High Frequency films.
2. Accuracy of measurement of low stress values is highly dependent on:

the accuracy of wafer curvature measurement both before and after film deposition
the quality and pre-stressing of wafers used for stress measurements
and requires a thick film (>5000Å) to produce a detectable/accurately measurable wafer curvature

3. Results given above apply to Silicon substrates.
4. Cleaning and conditioning of the chamber may be required when switching between processes, to obtain optimum repeatability. A minimum conditioning thickness of 2000-3000A is recommended. Further advice on chamber cleaning/conditioning strategies will be provided by OIPT based on customers’ applications and intended use of system.
5. Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern:

Run-to-run uniformity (reproducibility) is calculated from average wafer uniformity in 5 consecutive runs.