Diamond like Carbon Deposition (DLC)

DLC

HR-TEM picture, 200kV, elastically
filtered taken by TU Chemnitz,
showing the interface of a 200 nm
amoprhous DLC film deposited on a
Si wafer at the OPT application lab

DLC deposition in the PlasmaPro System133 RIE

Process Specification

Batch sizes:    up to 20 x 2", 5 x 100mm, 4 x 125mm Si substrates
Deposition rate      > 45nm/min
Uniformity   
Within wafer < ± 5% single 150mm (edge exclusion 7mm)
Wafer to wafer  < ± 10% 4 x 125mm
  

  • Process Features 
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Process Features

  • DLC deposited in the PlasmaPro System133 RIE features high breakdown voltage (example >1750V for a 120nm thick film), low leakage and high hardness. These properties make it a suitable passivation material for high voltage devices.
  • The PlasmaPro System133 RIE tool allows both deposition and etching of DLC films. Its large electrode size allows batch mode of operation. For maximum throughput and ease of use a cassette-loaded version is also available.
  • The PlasmaPro System133 RIE also uses optical emission to optimize the plasma clean or plasma etch time ensuring maximum throughput.
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Related Products

PlasmaPro System100
Load Locked Tool for DLC deposition
PlasmaPro System133
Load Locked Tool for DLC deposition
PlasmaPro NGP80
Open Load Tool for DLC deposition
PlasmaPro 800Plus
Open Load Tool for DLC deposition

Related Information

Deposition Processes - Deposition Process
Deposition Processes - Deposition Process
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SiO2 Deposition - Silicon Dioxide Deposition
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SiN Deposition - Silicon Nitride Deposition
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Indium Tin Oxide Deposition (ITO)
Indium Tin Oxide Magnetron Sputtering Deposition
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Al2O3 - Aluminium Oxide Deposition
Ion Beam Deposition of VaO(5-x) - Vanadium Pentoxide Deposition
Ion Beam Deposition of VaO(5-x) - Vanadium Pentoxide Deposition
TiO2 Deposition - Titanium Dioxide Deposition
TiO2 Deposition - Titanium Dioxide Deposition
ZnO ALD - Zinc Oxide Atomic Layer Deposition
ZnO ALD - Zinc Oxide Atomic Layer Deposition
Hafnium Dioxide RIBD (HfO2)
Hafnium dioxide Reactive Ion Beam Deposition (HfO2 RIBD)
La2O3 Deposition - Lanthanum(III) Oxide Deposition
La2O3 Deposition - Lanthanum(III) Oxide Deposition
Al Sputter Deposition - Aluminium Sputter Deposition
Aluminium Sputter Deposition (Al)
Ru Deposition - Ruthenium Deposition
Ru Deposition - Ruthenium Deposition
a-Si Deposition - Amorphous Silicon Deposition (PECVD)
a-Si Deposition - Amorphous Silicon Deposition (PECVD)
SiC Deposition - Silicon Carbide Deposition
SiC Deposition - Silicon Carbide Plasma Enhanced Chemical Vapour Deposition
SiGe Deposition - Silicon Germanium Deposition
SiGe Deposition - Silicon Germanium Deposition
PolySi Deposition - Polysilicon Deposition
PolySi Deposition - Polysilicon Deposition
Silicon Dioxide Reactive Ion Beam Deposition (SiO2)
SiO2 Reactive Ion Beam Deposition

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