Inductively Coupled Plasma (ICP) Etch from Oxford Instruments
Key features
- Separate RF generators for Inductively Coupled Plasma and electrode provide separate control over ion energy and ion density
- High conductance pumping port provides high gas throughput for fastest etch rates
- Electrostatic shield eliminates capacitive coupling, reduces electrical damage to devices, reduces chamber particles
- Oxford Instruments’ ICP tools include wafer clamping and helium cooling as standard, providing excellent temperature control with the option of a wide temperature range
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ICP Benefits
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System Features
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Benefits of ICP Etch
- High etch rates are achieved by high ion density (>1011 cm3) and high radical density
- Control over selectivity and damage is achieved by low ion energy
- Separate control over Inductively Coupled Plasma and electrode RF provides high process flexibility
- Chemical and ion-induced etching
- Can also be run in RIE mode for certain low etch rate applications
- Can be used for deposition in ICP-CVD mode, offering:
- very dense films at lower temperatures than PECVD
- low damage deposition onto temperature sensitive substrates
ICP Systems from Oxford Instruments
| Electrode Size |
240mm plasma uniform over central 50mm |
240mm |
240mm |
330mm |
| Loading |
Manual |
Loadlock |
Loadlock |
Loadlock |
| Substrates |
50mm |
150mm with carriers options available for multi-wafers or small pieces |
200mm with carriers options available for multi-wafers or small pieces |
330mm with carriers options available for multi-wafers or small pieces |
| Dopants |
No |
Yes for ICP-CVD option |
Yes for ICP-CVD option |
Yes for ICP-CVD option |
| MFC controlled gaslines |
8 or 12 line gas box available |
8 or 12 line gas box available |
8 or 12 line gas box available |
8 or 12 line gas box available |
| Wafer stage temperature range |
-150 to 400ºC |
-150 to 400ºC |
-150 to 400ºC |
-150 to 350ºC |
| Insitu plasma clean |
Yes dependent on material depositied |
Yes dependent on material depositied |
Yes dependent on material depositied |
Yes dependent on material depositied |