Physical Vapour Deposition (PVD)

PVD Physical Vapour Deposition - Click for larger image
Physical Vapour Deposition (PVD)

Physical Vapour Deposition (PVD) from Oxford Instruments

  • Typical process pressure: 5 - 30 mtorr
  • Good step coverage
  • Standard method for high quality Al (with Si/Cu/Ti), TiN, TiW
  •  Up to 4 x 200mm or 8 x 75mm cathodes
  • Substrates on a rotating holder
  • Substrate holder water cooled /heated (up to 400°C)
  • Pre-etch and RF Bias
  • Parameter: gas flows, pressure, RF power

 

  • Applications 
  • System Features 
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Typical Applications of Physical Vapour Deposition:

  • High quality Al with Si/Cu/Ti
  • Diffusion barriers TiN, TiW (reactive sputtering)
  • Resistor films NiCr, TaN
  • Noble metals: Au, Pt

Physical Vapour Deposition systems from Oxford Instruments

 Feature  PlasmaPro System400

PlasmaPro System100

Magnetron Size upto 200mm upto 200mm
Number of Magnetrons

6 x 100mm

4 x 200mm

 Single
RF and DC options Yes Yes
RF Bias Yes Yes
Loading Loadlock Loadlock
MFC controlled gaslines Typically upto 4 Typically 4
Wafer stage temperature range 20 to 300ºC
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Related Products

PlasmaPro System400
Magnetron sputtering process tool for PVD
PlasmaPro System100
Load Locked tool for Physical Vapour Deposition

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