Si nanowires using Au
nanoparticles as the catalyst
Oxford Instruments offers a range of process solutions for the growth of materials on the Nanoscale.
Nanoscale features can be formed by growth techniques (‘bottom up’) and etching (‘top down’). The Nanofab system is targeted at growth to satisfy the nanotechnology markets.
Nanoscale growth processes encompass:
- Nanotubes/nanowires
- Nanoscale thin films
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SEM Images
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Process Benefits
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System Features
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ZnO nanowires * |
Carbon Nanotubes |
*Courtesy of Nanoscience Centre, University of Cambridge
Nanofab System Process Benefits
- Controllable growth of nanotubes and nanowires
- Plasma pre-treatment of the catalyst for enhanced growth
- Annealing capabilities up to 800 °C
- Broad range of PECVD film deposition with excellent uniformity, high deposition rates and control of film properties such as refractive index, stress, electrical characteristics and wet chemcial etch rates
| Nanostructured Materials |
C, Si, Ge, ZnO, Ga2O3, GaN, GaAs, GaP, InP, InN |
| PECVD Films |
SiO2, SiNx, a-Si, SiON, poly-Si, SiC |
Nanoscale Growth Systems from Oxford Instruments
| Table Size |
Up to 200mm wafer |
Up to 200mm wafer |
| Load lock |
Installed |
Installed |
| Liquid Precursor Compatibility |
Compatible |
Compatible |
| Generator Frequency Range |
RF (13.56MHz), LF (50-460KHz) |
RF (13.56MHz), LF (50-460KHz) |
| General PECVD Process |
Oxide, Nitride, Oxynitride, a-Si |
Oxide, Nitride, Oxynitride, a-Si |
| Catalyst Pretreatment |
Capable |
Capable |
| Process for Nanomaterials |
Carbon Nanotubes,
Si, ZnO Nanowires |
Carbon Nanotubes,
Si Nanowires |
| Table Temperature Range |
Room Temp to 700C |
Room Temp to 800C |
| Temperature Agility |
Ordinary Ramp Rate |
Very High Ramp Rate |
| O2 atmosphere compatibility (<400C) |
Compatible |
Compatible |
| O2 atmosphere compatibility (>400C) |
Compatible |
Non-Compatible |
| Extra power supply for installation |
Required |
Required |
| Extra gasline for installation |
Not Required |
Required |