Failure Analysis

Oxford Instruments offers a unique family of de-processing solutions for Failure Analysis.

These flexible failure analysis tools allow a whole range of processes from passivation removal to anisotropic oxide removal, from small die or packaged device through to 300 mm wafers.

Benefits

• Flexible processes using either RIE/PE or ICP
• Advanced die process: Etch rate 20 times faster than standard RIE processes using the Plasma Accelerator
• Broad product range:
• µEtch300 for 300mm wafer processing
• µEtchICP is a fast and low damage tool for small die and packaged devices
• µEtch200 for 200mm wafer processing
• µEtchEL is an entry level dual-mode RIE/PE etch tool

• Results 
• Applications 
• System Features 
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After nitride passivation removal	After IMD Etch	Four metal layers exposed

Applications

• Isotropic polyimide removal (RIE or ICP mode)
• Isotropic Nitride (passivation) removal (PE or ICP mode)
• Anisotropic Oxide (IMD/ILD) removal (RIE or ICP mode)
• Anisotropic Low-K Oxide removal (RIE or ICP mode)
• Metal skeleton removal (RIE or ICP mode)
• Poly-Si removal (RIE mode)
• Al and Cu removal (ICP mode)
• Backside Bulk Si removal (ICP mode)

Failure Analysis Tools from Oxford Instruments:

Feature	µEtch300	µEtchICP	µEtch200	µEtchEL
Electrode Size	380mm or 460mm	240mm	240mm	240mm
Wafer Size	Up to 300mm	Up to 200mm	Up to 200mm	Up to 50mm
Loading	Open load	Open load	Open load	Open load
Generator Frequency Range	RF (13.56MHz)	RF (13.56MHz)	RF (13.56MHz)	RF(13.56MHZ), ICP (13.56MHz)
Plasma Mode	RIE/PE	RIE/PE	RIE/PE	ICP
Wafer stage temperature	0ºC – 80ºC	0ºC – 80ºC	0ºC – 80ºC	0ºC – 80ºC
Process gases	CHF­3, Ar, CF4,O2	CHF­3, Ar, CF4,O2	CHF­3, Ar, CF4,O2	CHF­3, Ar, CF4,O2, SF6
Plasma accelerator	Yes	Yes	No	Yes